Name: Circuit Protection Power Mos Transistor Chip IPD060N03LGATMA1
Brand: Infineon Technologies
Price: 1 USD

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Details

Technology:

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Transistor Polarity:

N-Channel

Number of Channels:

1 Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

50 A

Rds On - Drain-Source Resistance:

6 mOhms

Vgs - Gate-Source Voltage:

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage:

2.2 V

Qg - Gate Charge:

14.4 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

56 W

Channel Mode:

Enhancement

Tradename:

OptiMOS

Packaging:

Reel

Packaging:

Cut Tape

Brand:

Infineon Technologies

Configuration:

Single

Fall Time:

3 ns

Forward Transconductance - Min:

34 S

Height:

2.3 mm

Length:

6.5 mm

Product Type:

MOSFET

Rise Time:

3 ns

Series:

OptiMOS 3

2500

Subcategory:

MOSFETs

Transistor Type:

1 N-Channel

Typical Turn-Off Delay Time:

20 ns

Typical Turn-On Delay Time:

5 ns

Width:

6.22 mm

Part # Aliases:

IPD060N03L G SP000680632

Unit Weight:

0.011640 oz

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